This search combines search strings from the content search (i.e. "Full Text", "Author", "Title", "Abstract", or "Keywords") with "Article Type" and "Publication Date Range" using the AND operator.
Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71
Figure 1: (a) Schematic front view and (b) side view of the Si substrate produced by Fondazione Bruno Kessler...
Figure 2: (a) Scanning electron microscopy (SEM) image of MWCNT samples grown on the implantation area. The i...
Figure 3: Dark current comparison of the Si substrate and the CNT–Si heterojunction.
Figure 4: (a) Details of the dark current around the threshold voltage with a curve fit. (b) C–V plot of the ...
Figure 5: (a) Photocurrent induced by a 730 nm continuous wave, low power light source at various illuminatio...
Figure 6: (a) Dark current and photocurrent tunneling in a CNT–Si heterojunction under 378 nm light illuminat...
Beilstein J. Nanotechnol. 2014, 5, 1999–2006, doi:10.3762/bjnano.5.208
Figure 1: Schematic image of the two device layouts used: single face sample (SFS) and double face sample (DF...
Figure 2: TEM micrographs of CNTs dispersion spray obtained by means of: the ultrasonic atomizer a); the airb...
Figure 3: SEM image of the MWCNT film on a semi-insulating gallium arsenide substrate.
Figure 4: Dark-current–voltage characteristics for the SFS, DFS and ITO/GaAs/Ti/Au photodetector configuratio...
Figure 5: Absolute quantum efficiency trend in the visible light range, calculated at a bias voltage of −6 V ...
Figure 6: Absolute quantum efficiency trend in the UV range, calculated at a bias voltage of −6 V for the dev...
Figure 7: Responsivity trend of GaAs and CNTs based photodetectors.
Figure 8: Normalized photocurrent spectra measured at: (a) negative voltages, (b) positive voltages applied t...
Figure 9: Photocurrent as a function of the relative monochromatic light intensity at λ = 800 and 890 nm for ...